Fabrication of lateral superjunction devices using selective epitaxy
Abstract
A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.
Subject
H01L 21/28575H01L 21/02381
H01L 29/66204
H01L 29/2003
H01L 21/30612
H01L 29/452
H01L 21/0254
H01L 21/308
H01L 21/0242
H01L 29/861
H01L 29/0634
H01L 21/02645
Collections
Citation
Babb, Michael Everett; Harris, Harlan Rusty (2021). Fabrication of lateral superjunction devices using selective epitaxy. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from https : / /hdl .handle .net /1969 .1 /195037.