CMOS Wireless Receivers for Emerging RF/mm-Wave Applications

Abstract

With the advance of communication in people’s everyday life and ever-increasing request for more wireless communication throughput, many involved fields are offering new communication architectures or revisit and modify the existing ones. In this thesis two of such systems are studied, analyzed, designed, implemented in CMOS technology, and measured as a proof of concept.

In the first project which is covered in Section 2, an in-band full-duplex (IBFD) radio frequency (RF) receiver is implemented. In a conventional communication system, in order to limit the transmitter leakage on the receiver, either time division duplexing or frequency division duplexing is employed. However, this comes at the cost of not utilizing the full spectrum at any given time. A wideband receiver is proposed that performs transmitter leakage suppression, therefore demonstrates communication wherein the entire band is used both by the transmitter and receiver, and ideally result in twice increase in the entirely allocated RF spectrum. The prototype chip is fabricated in 65 nm CMOS.

In the second project which is covered in Section 3, a 22.2-43 GHz wideband 28 nm CMOS low-noise amplifier (LNA) is designed and fabricated. The LNA uses a new proposed architecture, gate-drain mutually induced feedback LNA (GDMIF-LNA). The LNA shows a wideband noise and power matching at the input, and also an important drawback of other popular architecture (common source with inductive degeneration) which is ground path modeling, is overcommed in this architecture. The bandwidth coverage of the LNA is a record in CMOS multi-stages LNAs.