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dc.contributor.advisorCagin, Tahir
dc.creatorDong, Mingxin
dc.date.accessioned2020-12-17T15:14:10Z
dc.date.available2022-05-01T07:12:39Z
dc.date.created2020-05
dc.date.issued2020-04-22
dc.date.submittedMay 2020
dc.identifier.urihttps://hdl.handle.net/1969.1/191617
dc.description.abstractThe fact that hexagonal boron nitride (h-BN) has remarkable thermal transport property, mechanical property and chemical stability provides endless possibilities in nanoscale thermal device designing. In this study, we investigated the thermal conductivity of different h-BN structures. We first gave a brief literature review of former experimental and simulation results, the development of MD simulations, and thermal transport theory based on Fourier's law and Green-Kubo formalism. We then applied equilibrium molecular dynamic (EMD) approach. Tersoff potential and LJ potential are applied as the in-plane/interlayer force field, respectively. Results showed that the in-plane thermal conductivity of bulk h-BN is around 170W/mK, while the interlayer thermal conductivity is reduced to 5W/mK due to interlayer phonon scattering. Thermal conductivity of pristine monolayer is around 300W/mK on average. Different phonon vibration modes could be speculated from the heat flux auto-correlation function (HCACF). We also applied non-equilibrium molecular dynamics (NEMD) methods and compared the result with the result given by Green-Kubo formalism. Both methods could give reasonable values of thermal conductivity, yet for NEMD methods the local stability should be taken into consideration.en
dc.format.mimetypeapplication/pdf
dc.language.isoen
dc.subjecthexagonal boron nitrideen
dc.subjectmolecular dynamicsen
dc.titleA COMPUTATIONAL STUDY OF THERMAL CONDUCTIVITY OF FREESTANDING H-BN STRUCTURESen
dc.typeThesisen
thesis.degree.departmentMaterials Science and Engineeringen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorTexas A&M Universityen
thesis.degree.nameMaster of Scienceen
thesis.degree.levelMastersen
dc.contributor.committeeMemberQian, Xiaofeng
dc.contributor.committeeMemberVaddiraju, Sreeram
dc.type.materialtexten
dc.date.updated2020-12-17T15:14:11Z
local.embargo.terms2022-05-01
local.etdauthor.orcid0000-0002-7148-5143


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