dc.creator | Jiang, Anxiao | |
dc.creator | En Gad, Eyal | |
dc.creator | Bruck, Jehoshua | |
dc.date.accessioned | 2019-06-17T17:12:55Z | |
dc.date.available | 2019-06-17T17:12:55Z | |
dc.date.issued | 2017-05-30 | |
dc.identifier.uri | https://hdl.handle.net/1969.1/177206 | |
dc.description.abstract | Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. It aims at minimizing the cost of changing the state of the memory. In another aspect, multi-cells, used for storing data in flash memories is provided. Each transistor is replaced with a multi-cell of m transistors connected in parallel. In yet another aspect, multi-permutations, are provided. The paradigm of representing information with permutations is generalized to the case where the number of cells in each level is a constant greater than one. | en |
dc.language | eng | |
dc.publisher | United States. Patent and Trademark Office | |
dc.rights | Public Domain (No copyright - United States) | en |
dc.rights.uri | http://rightsstatements.org/vocab/NoC-US/1.0/ | |
dc.title | Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage | en |
dc.type | Utility patent | en |
dc.format.digitalOrigin | reformatted digital | en |
dc.description.country | US | |
dc.contributor.assignee | California Institute of Technology | |
dc.contributor.assignee | Texas A&M University System | |
dc.identifier.patentapplicationnumber | 14/822680 | |
dc.date.filed | 2015-08-10 | |
dc.publisher.digital | Texas A&M University. Libraries | |
dc.subject.cpcprimary | G11C 16/0441 | |
dc.subject.cpcprimary | G11C 11/5628 | |
dc.subject.cpcprimary | G06F 3/0643 | |
dc.subject.cpcprimary | G11C 11/5621 | |
dc.subject.cpcprimary | G06F 3/0679 | |
dc.subject.cpcprimary | G06F 12/0246 | |
dc.subject.cpcprimary | G06F 3/0619 | |
dc.subject.cpcprimary | G11C 11/5635 | |
dc.subject.cpcprimary | G11C 16/0483 | |
dc.subject.cpcprimary | H03M 1/14 | |