Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy
Abstract
A substantially single phase, single crystalline, highly epitaxial film of Bi2 CaSr2 Cu2 O8 superconductor which has a Tc (zero resistance) of 83 K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO3, into the molten solution at 850° C., cooling the solution from 850° C. to 830° C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.
Subject
505/452423/594.7
427/62
427/443.2
505/729
505/733
505/742
C30B 19/02
C30B 29/225
C30B 29/22
Y10S 505/729
Y10S 505/733
Y10S 505/742
Collections
Citation
Pandey, Raghvendra K.; Raina, Kanwal; Solayappan, Narayanan (1994). Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from https : / /hdl .handle .net /1969 .1 /176505.