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Dynamics of Subsurface and Surface Chemisorption for B, C, and N on Gaas and Inp
(American Physical Society, 1991)
Using Hellmann-Feynman molecular-dynamics simulations, we have investigated interactions of first-row elements with the (110) surfaces of GaAs and InP. We find that these atoms prefer to occupy subsurface sites. The open ...
Simulations of Atomic Processes at Semiconductor Surfaces - General-Method and Chemisorption on Gaas(110)
(American Physical Society, 1988)
New Technique for Molecular-Dynamics Computer-Simulations - Hellmann-Feynman Theorem and Subspace Hamiltonian Approach
(American Physical Society, 1986)
Subspace Hamiltonian Technique
(American Physical Society, 1986)