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Response of GaAs to fast intense laser pulses
(American Physical Society, 1998)
Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 ...
Internal Image Potential in Semiconductors - Effect on Scanning-Tunneling-Microscopy
(American Physical Society, 1993)
The tunneling of electrons from a semiconductor surface to a metal tip, across a vacuum gap, is influenced by two image interactions: an attractive image potential in the vacuum region, which lowers the apparent tunneling ...