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dc.creatorJiang, Anxiao
dc.creatorEn Gad, Eyal
dc.creatorBruck, Jehoshua
dc.creatorYaakobi, Eitan
dc.date.accessioned2019-06-17T17:13:58Z
dc.date.available2019-06-17T17:13:58Z
dc.date.issued2018-03-13
dc.identifier.urihttp://hdl.handle.net/1969.1/177237
dc.description.abstractRank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. It aims at minimizing the cost of changing the state of the memory. In another aspect, multi-cells, used for storing data in flash memories is provided. Each transistor is replaced with a multi-cell of mm transistors connected in parallel. In yet another aspect, multi-permutations, are provided. The paradigm of representing information with permutations is generalized to the case where the number of cells in each level is a constant greater than one. In yet another aspect, rank-modulation rewriting schemes which take advantage of polar codes, are provided for use with flash memory.en
dc.languageeng
dc.publisherUnited States. Patent and Trademark Office
dc.rightsPublic Domain (No copyright - United States)en
dc.rights.urihttp://rightsstatements.org/vocab/NoC-US/1.0/
dc.titleRank-modulation rewriting codes for flash memoriesen
dc.typeUtility patenten
dc.format.digitalOriginreformatted digitalen
dc.description.countryUS
dc.contributor.assigneeCalifornia Institute of Technology
dc.contributor.assigneeTexas A&M University System
dc.identifier.patentapplicationnumber14/728749
dc.date.filed2015-06-02
dc.publisher.digitalTexas A&M University. Libraries


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