Rank modulation for flash memories
Abstract
We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, and overshoot errors when programming cells (a serious problem that reduces the writing speed), as well as mitigate the problem of asymmetric errors. We present schemes for Gray codes, rewriting and joint coding in the rank modulation paradigm.
Subject
714/752711/103
714/758
714/781
H04L 25/4919
G11C 16/3468
G11C 11/56
G11C 11/5621
G11C 11/5628
G06F 11/1072
G11C 7/1006
G11C 2211/5634
G11C 29/00
Collections
Citation
Jiang, Anxiao; Mateescu, Robert; Schwartz, Moshe; Bruck, Jehoshua (2012). Rank modulation for flash memories. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from https : / /hdl .handle .net /1969 .1 /177000.