Infrared generation in semiconductor lasers
Abstract
Infrared generation is disclosed. A first laser field having a first frequency associated with a first interband transition is generated. A second laser field having a second frequency associated with a second interband transition is generated. The generation of the first laser field occurs substantially simultaneously with the generation of the second laser field. A third laser field is generated from the first laser field and the second laser field. The third laser field has a third frequency associated with an intersubband transition. The third frequency is substantially equivalent to a difference between the second frequency and the first frequency.
Subject
372/45.01372/4
372/21
372/39
B82Y 20/00
H01S 5/1096
H01S 5/34
H01S 5/3412
H01S 5/3418
H01S 5/3419
H01S 5/4043
H01S 5/4087
H01S 2302/00
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Citation
Scully, Marlan O.; Belyanin, Alexey A.; Kocharovsky, Vitaly V.; Kocharovsky, Vladimir V. (2004). Infrared generation in semiconductor lasers. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from https : / /hdl .handle .net /1969 .1 /176762.