Method for making a high purity aluminum conductor used at ultra low temperature
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The aluminum conductor having increase of its electric resistivity kept small at ultra low temperature of 30° K. or lower even after cyclic strain is given at ultra low temperature, by controlling the crystal structure of the high purity aluminum conductor with purity of 99.9-99.9999 wt % so as to consist of (i) a veritable single or a substantially single crystal consisting of a bundle of sub-grains which have their crystal axes in the same direction or in the directions within a couple of degrees of deviation as a whole which has a specific crystal axis of or or the crystal axes close thereto in the longitudinal direction of the aluminum conductor, or (ii) a polycrystal most of which grains have respective specific crystal axes of and/or , or the crystal axes close thereto with respect to each grain in the longitudinal direction of the aluminum conductor, and have specific grain size of 0.01 mm to 3.0 mm.
Takahashi, Akihiko; Yasuda, Hitoshi; Hartwig, Karl T.; Mcdonald, Lacy C.; Zou, Hong (1997). Method for making a high purity aluminum conductor used at ultra low temperature. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from