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    • Method of forming lattice matched layer over a surface of a silicon substrate 

      Kirk, Wiley P.; Zhou X, Joe; Gnade, Bruce E.; Cho, Chih-chen (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2002-07-16)
      A method of forming lattice matched single crystal wide bandgap II-VI compound semiconductor films over a silicon substrate includes first cleaning (10) the silicon substrate. A passivation layer is formed (18), which may ...