Algorithms and Data Representations for Emerging Non-Volatile Memories
Abstract
The evolution of data storage technologies has been extraordinary. Hard disk drives
that fit in current personal computers have the capacity that requires tons of transistors
to achieve in 1970s. Today, we are at the beginning of the era of non-volatile memory
(NVM). NVMs provide excellent performance such as random access, high I/O speed, low
power consumption, and so on. The storage density of NVMs keeps increasing following
Moore’s law. However, higher storage density also brings significant data reliability issues.
When chip geometries scale down, memory cells (e.g. transistors) are aligned much closer
to each other, and noise in the devices will become no longer negligible. Consequently,
data will be more prone to errors and devices will have much shorter longevity.
This dissertation focuses on mitigating the reliability and the endurance issues for two
major NVMs, namely, NAND flash memory and phase-change memory (PCM). Our main
research tools include a set of coding techniques for the communication channels implied
by flash memory and PCM. To approach the problems, at bit level we design error
correcting codes tailored for the asymmetric errors in flash and PCM, we propose joint
coding scheme for endurance and reliability, error scrubbing methods for controlling storage
channel quality, and study codes that are inherently resisting to typical errors in flash
and PCM; at higher levels, we are interested in analyzing the structures and the meanings
of the stored data, and propose methods that pass such metadata to help further improve
the coding performance at bit level. The highlights of this dissertation include the first
set of write-once memory code constructions which correct a significant number of errors,
a practical framework which corrects errors utilizing the redundancies in texts, the first
report of the performance of polar codes for flash memories, and the emulation of rank
modulation codes in NAND flash chips.
Subject
Nonvolatile memoryflash memory
phase-change memory
coding theory
error correcting code
write-once memory
reliability
endurance
rank modulation code
scrubbing
Citation
Li, Yue (2014). Algorithms and Data Representations for Emerging Non-Volatile Memories. Doctoral dissertation, Texas A & M University. Available electronically from https : / /hdl .handle .net /1969 .1 /152646.
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