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dc.creatorAguado, R.
dc.creatorLopez-Sancho, MP
dc.creatorSinova, Jairo
dc.creatorBrey, L.
dc.date.accessioned2012-09-19T20:05:35Z
dc.date.available2012-09-19T20:05:35Z
dc.date.issued2004
dc.identifier.citationR. Aguado, MP Lopez-Sancho, Jairo Sinova and L. Brey. Phys.Rev.B 70 195201 2004."Copyright (2004) by the American Physical Society."en
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.70.195201
dc.identifier.urihttps://hdl.handle.net/1969.1/146804
dc.descriptionJournals published by the American Physical Society can be found at http://journals.aps.org/en
dc.description.abstractWe present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal effects within the mean field approximation. We also discuss the implications of this calculations on carrier concentration measurements from the optical f-sum rule and the analysis of plasmon-phonon coupled modes in Raman spectra.en
dc.language.isoen
dc.publisherAmerican Physical Society
dc.rightsThis work is archived in the Texas A&M Digital Repository with the express permission of the rights holder (commonly but not always the publisher). A copy of the permission document is on file with the Texas A&M University Libraries.en
dc.subjectCURIE-TEMPERATUREen
dc.subject(GA,MN)ASen
dc.subjectPhysicsen
dc.titleDielectric function of diluted magnetic semiconductors in the infrared regimeen
dc.typeArticleen
local.departmentPhysics and Astronomyen


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