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dc.creatorLIU, Y.
dc.creatorAllen, Roland E.
dc.date.accessioned2011-10-10T21:08:48Z
dc.date.available2011-10-10T21:08:48Z
dc.date.issued1995
dc.identifier.citationY. LIU and Roland E. Allen. Phys.Rev.B 52 1566-1577 1995."Copyright (1995) by the American Physical Society."en
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.52.1566
dc.identifier.urihttps://hdl.handle.net/1969.1/127297
dc.descriptionJournals published by the American Physical Society can be found at http://journals.aps.org/en
dc.description.abstractWe have developed a third-neighbor tight-binding model, with spin-orbit coupling included, to treat the electronic properties of Bi and Sb. This model successfully reproduces the features near the Fermi surface that will be most important in semimetal-semiconductor device structures, including (a) the small overlap of valence and conduction bands, (b) the electron and hob effective masses, and (c) the shapes of the electron and:hole Fermi surfaces. The present tight-binding model treats these semimetallic properties quantitatively, and it should, therefore, be useful for calculations of the electronic properties of proposed semimetal-semiconductor systems, including superlattices and resonant-tunneling devices.en
dc.language.isoen
dc.publisherAmerican Physical Society
dc.subjectTRANSPORT-PROPERTIESen
dc.subjectENERGY-GAPen
dc.subjectSEMICONDUCTORSen
dc.subjectSUPERLATTICESen
dc.subjectBISMUTHen
dc.subjectHETEROSTRUCTURESen
dc.subjectCRYSTALLINEen
dc.subjectPhysicsen
dc.titleElectronic-Structure of the Semimetals Bi and Sben
dc.typeArticleen
local.departmentPhysics and Astronomyen


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