Browsing by Subject "SURFACE"

Now showing items 1-8 of 8

    • Internal Image Potential in Semiconductors - Effect on Scanning-Tunneling-Microscopy 
      HUANG, ZH; WEIMER, M.; Allen, Roland E. (American Physical Society, 1993)
      The tunneling of electrons from a semiconductor surface to a metal tip, across a vacuum gap, is influenced by two image interactions: an attractive image potential in the vacuum region, which lowers the apparent tunneling ...
    • Numerical procedure for analyzing impurity-induced resonant-state STM images observed in high-T-c superconductors 
      Wang, Q.; Hu, Chia-Ren. (American Physical Society, 2004)
      Numerical procedure is developed for analyzing impurity-induced resonant-state STM images observed in high-T-c superconductors, and is applied to three sets of higher resolution data provided to us by J. C. Seamus Davis ...
    • Origin of the zero-bias conductance peaks observed ubiquitously in high-T-c superconductors 
      Hu, Chia-Ren. (American Physical Society, 1998)
      The midgap surface states predicted previously to exist on non-{n0m} surfaces of d(xa2-xb2-) superconductors (SC's) can be extended to midgap interface states (MIS's), which exist at almost all interface between grains of ...
    • Plasmon mass and Drude weight in strongly spin-orbit-coupled two-dimensional electron gases 
      Agarwal, Amit; Chesi, Stefano; Jungwirth, T.; Sinova, Jairo; Vignale, G.; Polini, Marco. (American Physical Society, 2011)
      Spin-orbit-coupled two-dimensional electron gases (2DEGs) are a textbook example of helical Fermi liquids, i.e., quantum liquids in which spin (or pseudospin) and momentum degrees of freedom at the Fermi surface have a ...
    • Response of GaAs to fast intense laser pulses 
      Graves, JS; Allen, Roland E. (American Physical Society, 1998)
      Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 ...
    • Systematics of Pure and Doped He-4 Clusters 
      Chin, Siu A.; KROTSCHECK, E. (American Physical Society, 1995)
      Optimized variational calculations have been carried out for pure and doped clusters of He-4 atoms up to a cluster size of N=1000 particles. For small cluster sizes with less than or equal to 112 particles, where comparisons ...
    • Theory of first-order layering transitions in thin helium films 
      Saslow, WM; Agnolet, Glenn; Campbell, CE; Clements, BE; Krotscheck, E. (American Physical Society, 1996)
      Thin liquid He-4 films on graphite show evidence of layered growth with increasing number density via a succession of first-order phase transitions. These so-called ''layering transitions'' separate uniformly covering ...
    • Theory of the hysteresis loop in ferromagnets 
      Lyuksyutov, Igor F.; Nattermann, T.; Pokrovsky, Valery L. (American Physical Society, 1999)
      We consider three mechanisms of hysteresis phenomena in alternating magnetic field: the domain-wall motion in a random medium, the nucleation, and the retardation of magnetization due to slow (critical) fluctuations. We ...