Browsing by Subject "G11C 29/52"

Now showing items 1-2 of 2

    • Asymmetric error correction and flash-memory rewriting using polar codes 
      En Gad, Eyal; Li, Yue; Kliewer, Joerg; Langberg, Michael; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2019-08-13)
      Techniques are disclosed for generating codes for representation of data in memory devices that may avoid the block erasure operation in changing data values. Data values comprising binary digits (bits) can be encoded and ...
    • Rank-modulation rewriting codes for flash memories 
      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-03-13)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...