Browsing by Subject "G11C 16/349"

Now showing items 1-2 of 2

    • NAND flash reliability with rank modulation 
      Li, Yue; En Gad, Eyal; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-05-29)
      The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for ...
    • Rank-modulation rewriting codes for flash memories 
      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2018-03-13)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...