Browsing by Subject "FinFET"
Now showing items 1-2 of 2
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(2012-07-16)In order to correctly perform circuit simulation, it is crucial that parasitic capacitances near devices are accurately extracted and are consistent with the SPICE models. Although 3D device simulation can be used to extract ...
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(2016-12-08)The use of group III-V semiconductor materials promise superior performance compared to silicon and can be considered a fundamental paradigm shift away from mature silicon technology. Group III-V semiconductors allow for ...