Two dimensional numerical model for the lateral PNP transistor
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Date
1978
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Abstract
A two dimensional numerical model for the lateral pnp transistor is presented. Heavy doping effects are taken into account by employing doping dependent intrinsic concentration. Terminal characteristics of the injector of an Integrated Injection Logic unit are predicted and the results are verified from measurements made on o identical devices. The propagation delay time of the I^2L unit is also predicted. By comparing the results with those obtained from a conventional model, it is shown that such a model is not adequate enough in predicting the terminal characteristics of the lateral pnp transistor.
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Major electrical engineering