A CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates
Date
1995
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Texas A&M University
Abstract
This thesis describes a CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates. Using analytical models for the transient behavior of the gates, accurate estimates of the power dissipated by each type of gate during a typical transition are arrived at. The values thus obtained show a very good agreement with those obtained from HSPICE simulations. A detailed transient analysis is performed on the BiCMOS gate in particular and a expression for the current response is derived. This piecewise expression accurately models the current behavior of the BICMOS gate taking into account all important second-order effects. The current expression obtained enables a quick and accurate estimate of the power dissipation.
Description
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Includes bibliographical references.
Issued also on microfiche from Lange Micrographics.
Includes bibliographical references.
Issued also on microfiche from Lange Micrographics.
Keywords
electrical engineering., Major electrical engineering.