A Dual Band CMOS Class F VCO at mmWave Frequencies
| dc.contributor.advisor | Entesari, Kamran | |
| dc.contributor.committeeMember | Nevels, Robert D | |
| dc.contributor.committeeMember | Silva-Martinez, Jose | |
| dc.contributor.committeeMember | Jarrahbashi, Dorrin | |
| dc.creator | Kodati, Himaja | |
| dc.date.accessioned | 2022-01-27T22:18:46Z | |
| dc.date.available | 2023-08-01T06:41:30Z | |
| dc.date.created | 2021-08 | |
| dc.date.issued | 2021-07-29 | |
| dc.date.submitted | August 2021 | |
| dc.date.updated | 2022-01-27T22:18:47Z | |
| dc.description.abstract | With growing demand for 5G applications, there is huge amount of interest for communication systems operating at 5G frequencies. An integral part of these systems is a Voltage Controlled Oscillator (VCO). RF signals need to be modulated on-to a carrier frequency for wireless communication. A VCO are used to generate the carrier frequency signal. Communication standards dictate the Phase Noise requirement of the oscillator based on the number of channels in the band. Class F VCOs are known to provide 3dB better Phase Noise than traditional Class B VCOs. Current work explores this benefit at mmWave frequencies. This work proposes a Class F dual band VCO with active switching capability, centered around the two mmWave bands at 22 and 35GHz. A Class B VCO is also designed for similar frequency bands, to validate the FoM improvement of a Class F design. Both the VCOs are designed using Global Foundaries 22nm FDSOI process. The Class F VCO achieves a tuning range of 22% and 14% in the 22 and 35GHz bands, and phase noise 1MHz is less than -112dBc/Hz and -103dBc/Hz in the low and high bands, respectively. The Oscillator consumes 17mW at 0.8V supply. In comparison, the Class B Oscillator provides FoM of 190dB and 185dB while the Class F design gives FoM less than -192dB and -190dB in 22 and 35GHz bands respectively, suggesting that the Class F design gives superior performance. | en |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | https://hdl.handle.net/1969.1/195399 | |
| dc.language.iso | en | |
| dc.subject | VCO | en |
| dc.subject | TR | en |
| dc.subject | Phase Noise | en |
| dc.subject | FoM | en |
| dc.subject | FDSOI | en |
| dc.title | A Dual Band CMOS Class F VCO at mmWave Frequencies | en |
| dc.type | Thesis | en |
| dc.type.material | text | en |
| local.embargo.terms | 2023-08-01 | |
| local.etdauthor.orcid | 0000-0002-2648-9030 | |
| thesis.degree.department | Electrical and Computer Engineering | en |
| thesis.degree.discipline | Electrical Engineering | en |
| thesis.degree.grantor | Texas A&M University | en |
| thesis.degree.level | Masters | en |
| thesis.degree.name | Master of Science | en |