Show simple item record

dc.creatorKumar, Ravi C.K
dc.date.accessioned2012-06-07T22:37:03Z
dc.date.available2012-06-07T22:37:03Z
dc.date.created1994
dc.date.issued1994
dc.identifier.urihttps://hdl.handle.net/1969.1/ETD-TAMU-1994-THESIS-K967
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to digital@library.tamu.edu, referencing the URI of the item.en
dc.descriptionIncludes bibliographical references.en
dc.description.abstractused for developing the temperature contours inside the furnace. The resulting oxide thickness profiles generated can be viewed either as a color coded graph or portrayed in 3 dimensions. Several conveniences like a user friendly data entry module and PostScript conversion for hard copies are provided. The software is expected to be useful to process engineers in understanding their furnace better and thus reduce the time taken to stabilize the process line. Demand for high quality control and stringent manufacturing standards continue to escalate in the VLSI industry. The term "manufacturing performance" and C4 manufacturing capability" are becoming by words of quality control in the VLSI process industry. Equipment characterization has emerged as a competent way of increasing the throughput in the VLSI factory with minimal time overhead in trial runs and maturity delays. The detailed analysis required for such techniques has paved way for computer software tools. Computer interpretations through simulation and modeling can fulfill a critical need in managing the voluminous data and provide timely feedback for manufacturing quality control. A perfect example to illustrate this point is the cylindrical furnace referred to as the "diffusion" furnace. The furnace is one the most important and complex process equipment in the process line and efforts towards characterizing it will be well worth the effort. This thesis will outline a software to characterize a furnace based on its single most important utility-oxide growth on the silicon wafer. The software developed is completely generic and has no affiliation to any make of furnace. The data required for simulation can easily be obtained from the actual piece of equipment. Simulation capabilities include almost all possible environments for oxidation such as wet, dry, with/without HCI, various levels of doping etc. Interpolation techniques with acceptable accuracy are used for developing the temperature contours inside the furnace. The resulting oxide thickness profiles generated can be viewed either as a color coded graph or portrayed in 3 dimensions. Several conveniences like a user friendly data entry module and PostScript conversion for hard copies are provided. The software is expected to be useful to process engineers in understanding their furnace better and thus reduce the time taken to stabilize the process line.en
dc.format.mediumelectronicen
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherTexas A&M University
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en
dc.subjectelectrical engineering.en
dc.subjectMajor electrical engineering.en
dc.titleAn X-based spatial oxide growth visualization software for furnace characterizationen
dc.typeThesisen
thesis.degree.disciplineelectrical engineeringen
thesis.degree.nameM.S.en
thesis.degree.levelMastersen
dc.type.genrethesisen
dc.type.materialtexten
dc.format.digitalOriginreformatted digitalen


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

This item and its contents are restricted. If this is your thesis or dissertation, you can make it open-access. This will allow all visitors to view the contents of the thesis.

Request Open Access