Infrared generation in semiconductor lasers
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Infrared generation is disclosed. A first laser field having a first frequency associated with a first interband transition is generated. A second laser field having a second frequency associated with a second interband transition is generated. The generation of the first laser field occurs substantially simultaneously with the generation of the second laser field. A third laser field is generated from the first laser field and the second laser field. The third laser field has a third frequency associated with an intersubband transition. The third frequency is substantially equivalent to a difference between the second frequency and the first frequency.
Scully, Marlan O.; Belyanin, Alexey A.; Kocharovsky, Vitaly V.; Kocharovsky, Vladimir V. (2004). Infrared generation in semiconductor lasers. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from