Texas A&M University LibrariesTexas A&M University LibrariesTexas A&M University Libraries
    • Help
    • Login
    OAKTrust
    View Item 
    •   OAKTrust Home
    • University Libraries
    • Business Library and Collaboration Commons
    • Texas A&M University Patents
    • View Item
    •   OAKTrust Home
    • University Libraries
    • Business Library and Collaboration Commons
    • Texas A&M University Patents
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Oxidized porous silicon field emission devices

    Thumbnail
    View/ Open
    5430300.pdf (586.1Kb)
    Date
    1995-07-04
    Author
    Yue, Wing K.
    Parker, Donald L.
    Weichold, Mark H.
    Metadata
    Show full item record
    Abstract
    A low voltage vacuum field emission device and method for manufacturing is provided. The devices are fabricated by anodizing a heavily doped silicon wafer substrate (12) in concentrated HF solution, forming extremely sharp silicon tips (18) at the silicon to porous silicon interface. The resulting porous silicon layer is then oxidized, and a metal film (22) is deposited by evaporation on the porous silicon. Silicon substrate (12) is the cathode, and metal film dots (22) are the anodes. The I-V characteristics for the field emission devices follow Fowler-Nordheim curves over three decades of current. The I-V characteristics are also utterly independent of temperature up to 250° C. When the oxidized porous silicon layer (OPSL) is about 5000 Å, substantial current is obtained with less than 10 volts. Recent experiments leave no doubt that the charge transport is in the vacuum of the pores. A silicon wafer that contains an OPSL may prove to be a very useful material for the fabrication of low voltage, low noise field emitters for vacuum microelectronics.
    URI
    https://hdl.handle.net/1969.1/176524
    Subject
    250/423F
    445/50
    445/51
    H01J 1/3042
    H01J 9/025
    H01J 21/04
    H01J 21/105
    Collections
    • Texas A&M University Patents
    Citation
    Yue, Wing K.; Parker, Donald L.; Weichold, Mark H. (1995). Oxidized porous silicon field emission devices. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from https : / /hdl .handle .net /1969 .1 /176524.

    DSpace software copyright © 2002-2016  DuraSpace
    Contact Us | Send Feedback
    Theme by 
    Atmire NV
     

     

    Advanced Search

    Browse

    All of OAKTrustCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsDepartmentTypeThis CollectionBy Issue DateAuthorsTitlesSubjectsDepartmentType

    My Account

    LoginRegister

    Statistics

    View Usage Statistics
    Help and Documentation

    DSpace software copyright © 2002-2016  DuraSpace
    Contact Us | Send Feedback
    Theme by 
    Atmire NV