Now showing items 1-6 of 6

    • Olejniczak, Zbigniew (Texas A&M University. Libraries, 1985)
      A high-precision Pulse Fourier-Transform Nuclear-Magnetic-Resonance technique was used to measure the magnetic susceptibility of solid helium-3 in the bcc phase. Several molar volume samples ranging from 19.80 ml/mole to ...
    • Pandey, Raghvendra K.; Raina, Kanwal K.; Solayappan, Narayanan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 1995-04-18)
      A substantially single phase, single crystalline, highly epitaxial film of Bi2 CaSr2 Cu2 O8 superconductor which has a Tc (zero resistance) of 83K is provided on a lattice-matched substrate with no intergrowth. This film ...
    • Pandey, Raghvendra K.; Raina, Kanwal K.; Solayappan, Narayanan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2001-07-24)
      A method for forming SbSI thin films is formed. In the first step of the method, a substrate (14) is provided. Next a buffer layer (16) is formed on the substrate (14). Then, a SbSI source (12) is provided. The SbSI source ...
    • Pandey, Raghvendra K.; Raina, Kanwal K.; Solayappan, Narayanan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2000-11-28)
      A method for forming SbSI thin films is formed. In the first step of the method, a substrate (14) is provided. Next a buffer layer (16) is formed on the substrate (14). Then, a SbSI source (12) is provided. The SbSI source ...
    • Pandey, Raghvendra K.; Raina, Kanwal; Solayappan, Narayanan (United States. Patent and Trademark Office; Texas A&M University. Libraries, 1994-05-24)
      A substantially single phase, single crystalline, highly epitaxial film of Bi2 CaSr2 Cu2 O8 superconductor which has a Tc (zero resistance) of 83 K is provided on a lattice-matched substrate with no intergrowth. This film ...
    • Lim, Hunhwa (Texas A&M University. Libraries, 1985)
      The Si/NiSi2 (lll) interface is of both fundamental and technological interest: From the fundamental point of view, it is the best characterized of all semiconductor/metal interfaces, with two well-determined geometries ...