Now showing items 1-2 of 2

    • Hall effect at a tunable metal-insulator transition 

      Teizer, Winfried; Hellman, F.; Dynes, RC. (American Physical Society, 2003)
      Using a rotating magnetic field, the Hall effect in three-dimensional amorphous GdxSi1-x has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient ...
    • Variation of the density of states in amorphous GdSi at the metal-insulator transition 

      Bokacheva, L.; Teizer, Winfried; Hellman, F.; Dynes, RC. (American Physical Society, 2004)
      We have performed detailed conductivity and tunneling measurements on the amorphous, magnetically doped material alpha-GdxSi1-x, which can be driven through the metal-insulator transition by the application of an external ...