dc.contributor.advisor | Hu, Jiang | |
dc.creator | Henrichson, Trenton D. | |
dc.date.accessioned | 2010-01-14T23:54:13Z | |
dc.date.accessioned | 2010-01-16T02:30:16Z | |
dc.date.available | 2010-01-14T23:54:13Z | |
dc.date.available | 2010-01-16T02:30:16Z | |
dc.date.created | 2008-12 | |
dc.date.issued | 2010-01-14 | |
dc.identifier.uri | https://hdl.handle.net/1969.1/ETD-TAMU-2008-12-100 | |
dc.description.abstract | Transistor aging through negative bias temperature instability (NBTI) has become a major lifetime constraint in VLSI circuits. We propose a technique that uses
antifuses to widen PMOS transistors later in a circuit?s life cycle to combat aging. Using HSPICE and 70nm BPTM process numbers, we simulated the technique on four circuits (a ring oscillator, a fan-out four circuit, an ISCAS c432 and c2670). Over the lifetime of the circuit, our simulations predict a 8.89% and a 13% improvement in power in the c432 and c2670 circuits respectively when compared to similarly performing traditional circuits. | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.subject | Transistor Ageing Antifuse NBTI negative bias temperature instability FTS Field Transistor Sizing | en |
dc.title | Countering Aging Effects through Field Gate Sizing | en |
dc.type | Book | en |
dc.type | Thesis | en |
thesis.degree.department | Electrical Engineering | en |
thesis.degree.discipline | Computer Engineering | en |
thesis.degree.grantor | Texas A&M University | en |
thesis.degree.name | Master of Science | en |
thesis.degree.level | Masters | en |
dc.contributor.committeeMember | Khatri, Sunil | |
dc.contributor.committeeMember | Shi, Weiping | |
dc.contributor.committeeMember | Walker, Duncan | |
dc.type.genre | Electronic Thesis | en |