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dc.creatorNominanda, Helindaen_US
dc.date.accessioned2012-06-07T23:21:55Z
dc.date.available2012-06-07T23:21:55Z
dc.date.created2004en_US
dc.date.issued2004
dc.identifier.urihttp://hdl.handle.net/1969.1/ETD-TAMU-2004-THESIS-N66en_US
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to digital@library.tamu.edu, referencing the URI of the item.en_US
dc.descriptionIncludes bibliographical references (leaves 81-88).en_US
dc.descriptionIssued also on microfiche from Lange Micrographics.en_US
dc.description.abstractThe material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films deposited at low substrate temperature for devices such as thin film transistors (TFTs). The effect of the deposition parameters such as doping gas concentration, substrate temperature, hydrogen dilution, helium dilution, power density, and pressure at 50 kHz rf frequency on the films' characteristics were analyzed. The films' electrical property was characterized by its dark resistivity. The chemical composition and bonding characteristics were discussed. p-channel TFTs were fabricated with these optimized films. Three different levels of dopant concentrations in the channel were used to detect the dopant effect on the TFT properties. Doping resulted in the increase of film deposition rate. The low film deposition rate at the high temperature deposition corresponds to a dense structured film. The increase of gas phase H₂ concentration could increase H₂ etching of the weak bonds in the film, which is consistent with the decrease of the deposition rate. Film's dark conductivity is determined by the atomic B concentration in the film, the substrate temperature, the ion bombardment effect, the surface morphology, and the gas phase and film hydrogen concentration. At high power density and high pressure plasma condition, film with a high deposition rate shows a high conductivity. However, excessive ion bombardment effect, e.g. in powdery plasma region, limits the further increase of the conductivity. Film deposited with He dilution demonstrates a higher conductivity compared to the H₂ dilution counterpart. This might be attributed to a more effective ion bombardment effect of the former. Powder generation in the plasma significantly affects the conductivity of He diluted film compared to the H₂ diluted ones, which might be due to the less H₂ etching effect at the He dilution deposition. The output and transfer characteristics show the normal p-channel TFTs behavior. TFT characteristics, such as mobility, threshold voltage, and on-off current ratio were affected by the doping gas concentration in the channel layer and the deposition process.en_US
dc.format.mediumelectronicen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherTexas A&M Universityen_US
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en_US
dc.subjectchemical engineering.en_US
dc.subjectMajor chemical engineering.en_US
dc.titleStudy of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistoren_US
dc.typeThesisen_US
thesis.degree.disciplinechemical engineeringen_US
thesis.degree.nameM.S.en_US
thesis.degree.levelMastersen_US
dc.type.genrethesis
dc.type.materialtexten_US
dc.format.digitalOriginreformatted digitalen_US


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