NOTE: This item is not available outside the Texas A&M University network. Texas A&M affiliated users who are off campus can access the item through NetID and password authentication or by using TAMU VPN. Non-affiliated individuals should request a copy through their local library's interlibrary loan service.
A study of plasma modification of low k polyimide thin film
|dc.description||Due to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to firstname.lastname@example.org, referencing the URI of the item.||en_US|
|dc.description||Includes bibliographical references (leaves 68-71).||en_US|
|dc.description||Issued also on microfiche from Lange Micrographics.||en_US|
|dc.description.abstract||To meet the next generation device performance demands, high-speed integrated circuits are required. By just shrinking the device size, the desired device performance cannot be achieved. Thus, to improve the performance sufficiently, new substitute materials for current metal and interlayer dielectrics are required. One of the promising substitute materials for an interlayer dielectric is polyimide. The general characteristics of the starting material, fluorinated polyamic acid, were investigated. The effect of post metal annealing and a SiN[x] barrier layer between metal and polyimide on the properties of the polyimide film was studied. Plasma-modified, low k (dielectric constant), polyimide thin film has been studied for the future interlayer dielectric. The results show that the film's k value was lowered under various plasma hydrogenation conditions. Temperature is an important factor in the hydrogenation. Another dielectric property, the leakage current, was little influenced by hydrogenation. Physical and chemical properties of the modified film were investigated extensively. The hydrogenation method can be used to reduce the dielectric constant of the given material without sacrificing leakage current.||en_US|
|dc.publisher||Texas A&M University||en_US|
|dc.rights||This thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.||en_US|
|dc.subject||Major chemical engineering.||en_US|
|dc.title||A study of plasma modification of low k polyimide thin film||en_US|
Files in this item
This item appears in the following Collection(s)
Digitized Theses and Dissertations (1922–2004)
Texas A&M University Theses and Dissertations (1922–2004)
Request Open Access
This item and its contents are restricted. If this is your thesis or dissertation, you can make it open-access. This will allow all visitors to view the contents of the thesis.