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dc.creatorChung, Taewooen_US
dc.date.accessioned2012-06-07T23:12:33Z
dc.date.available2012-06-07T23:12:33Z
dc.date.created2002en_US
dc.date.issued2002
dc.identifier.urihttp://hdl.handle.net/1969.1/ETD-TAMU-2002-THESIS-C4514en_US
dc.descriptionDue to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to digital@library.tamu.edu, referencing the URI of the item.en_US
dc.descriptionIncludes bibliographical references (leaves 68-71).en_US
dc.descriptionIssued also on microfiche from Lange Micrographics.en_US
dc.description.abstractTo meet the next generation device performance demands, high-speed integrated circuits are required. By just shrinking the device size, the desired device performance cannot be achieved. Thus, to improve the performance sufficiently, new substitute materials for current metal and interlayer dielectrics are required. One of the promising substitute materials for an interlayer dielectric is polyimide. The general characteristics of the starting material, fluorinated polyamic acid, were investigated. The effect of post metal annealing and a SiN[x] barrier layer between metal and polyimide on the properties of the polyimide film was studied. Plasma-modified, low k (dielectric constant), polyimide thin film has been studied for the future interlayer dielectric. The results show that the film's k value was lowered under various plasma hydrogenation conditions. Temperature is an important factor in the hydrogenation. Another dielectric property, the leakage current, was little influenced by hydrogenation. Physical and chemical properties of the modified film were investigated extensively. The hydrogenation method can be used to reduce the dielectric constant of the given material without sacrificing leakage current.en_US
dc.format.mediumelectronicen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherTexas A&M Universityen_US
dc.rightsThis thesis was part of a retrospective digitization project authorized by the Texas A&M University Libraries in 2008. Copyright remains vested with the author(s). It is the user's responsibility to secure permission from the copyright holder(s) for re-use of the work beyond the provision of Fair Use.en_US
dc.subjectchemical engineering.en_US
dc.subjectMajor chemical engineering.en_US
dc.titleA study of plasma modification of low k polyimide thin filmen_US
dc.typeThesisen_US
thesis.degree.disciplinechemical engineeringen_US
thesis.degree.nameM.S.en_US
thesis.degree.levelMastersen_US
dc.type.genrethesis
dc.type.materialtexten_US
dc.format.digitalOriginreformatted digitalen_US


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