Abstract
A propagator method is introduced for calculating the transmission spectra of semiconductor nanostructures, and the bound state energies and wave functions of quantum wells. This method is then generalized to include the effects of a nonpa,rabolic dispersion relation. Calculations are done for model cases and compared to analytical results. The original and generalized methods are then applied to real world device potential profiles. In particular, the bipolar quantum resonant tunneling transistor (BiQuaRTT) is considered in detail. The quantum-mechanical origin of the negative differential resistance (NDR) resonances observed in the BiQuaRTT is investigated. We present arguments as to why these resonances occur even in the absence of an emitter/base barrier. Models are presented to predict the base/collector biases at which NDR resonances occur, and are compared to previous models.
Mondragon, Antonio Richard (1996). Transmission resonances in the bipolar quantum resonant tunneling transistor. Master's thesis, Texas A&M University. Available electronically from
https : / /hdl .handle .net /1969 .1 /ETD -TAMU -1996 -THESIS -M65.