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dc.contributor.advisorKarsilayan, Aydin Ilkeren_US
dc.creatorSharma, Pushkaren_US
dc.date.accessioned2006-08-16T19:01:56Z
dc.date.available2006-08-16T19:01:56Z
dc.date.created2005-05en_US
dc.date.issued2006-08-16
dc.identifier.urihttp://hdl.handle.net/1969.1/3749
dc.description.abstractIEEE 802.15 High Rate Alternative PHY task group (TG3a) is working to define a protocol for Wireless Personal Area Networks (WPANs) which makes it possible to attain data rates of greater than 110Mbps. Ultra Wideband (UWB) technology utilizing frequency band of 3.168 GHz – 10.6 GHz is an emerging solution to this with data rates of 110, 200 and 480 Mbps. Initially, UWB mode I devices using only 3.168 GHz – 4.752 GHz have been proposed. Low Noise Amplifier (LNA) and I-Q mixers are key components constituting the RF front-end. Performance of these blocks is very critical to the overall performance of the receiver. In general, main considerations for the LNA are low noise, 50 broadband input matching, high gain with maximum flatness and good linearity. For the mixers, it is essential to attain low flicker noise performance coupled with good conversion gain. Proposed LNA architecture is a derivative of inductive source degenerated topology. Broadband matching at the LNA output is achieved using LC band-pass filter. To obtain high gain with maximum flatness, an LC band-pass filter is used at its output. Proposed LNA achieved a gain of 15dB, noise figure of less than 2.6dB and IIP3 of more than -7dBm. Mixer is a modified version of double balanced Gilbert cell topology where both I and Q channel mixers are merged together. Frequency response of each sub-band is matched by using an additional inductor, which further improves the noise figure and conversion gain. Current bleeding scheme is used to further reduce the low frequency noise. Mixer achieves average conversion gain of 14.5dB, IIP3 more than 6dBm and Double Side Band (DSB) noise figure less than 9dB. Maximum variation in conversion gain is desired to be less than 1dB. Both LNA and mixers are designed to be fabricated in TSMC 0.18µm CMOS technology.en_US
dc.format.extent724345 bytes
dc.format.mediumelectronicen_US
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.publisherTexas A&M Universityen_US
dc.subjectUWBen_US
dc.subjectLNAen_US
dc.subjectCMOSen_US
dc.subjectRFen_US
dc.subjectMIXERen_US
dc.titleDesign of a 3.1-4.8 GHZ RF front-end for an ultra wideband receiveren_US
dc.typeBooken
dc.typeThesisen
thesis.degree.departmentElectrical Engineeringen_US
thesis.degree.disciplineElectrical Engineeringen_US
thesis.degree.grantorTexas A&M Universityen_US
thesis.degree.nameMaster of Scienceen_US
thesis.degree.levelMastersen_US
dc.contributor.committeeMemberParlos, Alexanderen_US
dc.contributor.committeeMemberSilva-Martinez, Joseen_US
dc.contributor.committeeMemberSingh, Chananen_US
dc.type.genreElectronic Thesisen_US
dc.type.materialtexten_US
dc.format.digitalOriginborn digitalen_US


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