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    • Zirconium-doped tantalum oxide high-k gate dielectric films 

      Tewg, Jun-Yen (Texas A&M University, 2005-02-17)
      A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new ...