Topological insulator-based field-effect transistor
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A Topological INsulator-based field-effect transistor (TINFET) is disclosed. The TINFET includes a first and second gate dielectric layers separated by a topological insulator (TI) layer. A first gate contact is connected to the first gate dielectric layer on the surface that is opposite the TI layer. A second gate contact may be connected to the second gate dielectric layer on the surface that is opposite the TI layer. A first TI surface contact is connected to one surface of the TI layer, and a second TI surface contact is connected to the second surface of the TI layer.
Banerjee, Sanjay K.; Register II, Leonard Franklin; Macdonald, Allan; Sahu, Bhagawan R.; Jadaun, Priyamvada; Chang, Jiwon (2014). Topological insulator-based field-effect transistor. United States. Patent and Trademark Office; Texas A&M University. Libraries. Available electronically from