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dc.creatorMasek, J.en_US
dc.creatorKudrnovsky, J.en_US
dc.creatorMaca, F.en_US
dc.creatorSinova, Jairoen_US
dc.creatorMacDonald, A. H.en_US
dc.creatorCampion, R. P.en_US
dc.creatorGallagher, B. L.en_US
dc.creatorJungwirth, T.en_US
dc.date.accessioned2012-09-19T20:05:40Z
dc.date.available2012-09-19T20:05:40Z
dc.date.issued2007en_US
dc.identifier.citationJ. Masek, J. Kudrnovsky, F. Maca, Jairo Sinova, A. H. MacDonald, R. P. Campion, B. L. Gallagher and T. Jungwirth. Phys.Rev.B 75 045202 2007."Copyright (2007) by the American Physical Society."en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.75.045202en_US
dc.identifier.urihttp://hdl.handle.net/1969.1/146815
dc.descriptionJournals published by the American Physical Society can be found at http://journals.aps.org/en_US
dc.description.abstractA remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsThis work is archived in the Texas A&M Digital Repository with the express permission of the rights holder (commonly but not always the publisher). A copy of the permission document is on file with the Texas A&M University Libraries.en_US
dc.subjectTRANSITION-METAL IMPURITIESen_US
dc.subjectDILUTED MAGNETIC SEMICONDUCTORSen_US
dc.subjectV COMPOUNDen_US
dc.subjectSEMICONDUCTORSen_US
dc.subjectMOLECULAR-BEAM EPITAXYen_US
dc.subjectEXCHANGE INTERACTIONSen_US
dc.subjectT-Cen_US
dc.subject(GA,MN)ASen_US
dc.subjectALLOYSen_US
dc.subjectACCEPTORen_US
dc.subjectSTATESen_US
dc.subjectPhysicsen_US
dc.titleMn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculationsen_US
dc.typeArticleen_US
local.departmentPhysics and Astronomyen_US


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