Dynamics of Subsurface and Surface Chemisorption for B, C, and N on Gaas and Inp

dc.creator	MENON, M.
dc.creator	Allen, Roland E.
dc.date.accessioned	2011-10-10T21:08:44Z
dc.date.available	2011-10-10T21:08:44Z
dc.date.issued	1991
dc.identifier.citation	M. MENON and Roland E. Allen. Phys.Rev.B 44 11293-11301 1991."Copyright (1991) by the American Physical Society."	en
dc.identifier.uri	http://dx.doi.org/10.1103/PhysRevB.44.11293
dc.identifier.uri	https://hdl.handle.net/1969.1/127289
dc.description	Journals published by the American Physical Society can be found at http://journals.aps.org/	en
dc.description.abstract	Using Hellmann-Feynman molecular-dynamics simulations, we have investigated interactions of first-row elements with the (110) surfaces of GaAs and InP. We find that these atoms prefer to occupy subsurface sites. The open structure of the tetrahedrally bonded GaAs and InP, together with the small sizes of the first-row elements, makes it relatively easy for these atoms to move beneath the surface. Surface chemisorption is also observed in the simulations, but is found to be metastable.	en
dc.language.iso	en
dc.publisher	American Physical Society
dc.subject	SEMICONDUCTOR SURFACES	en
dc.subject	ELECTRONIC STATES	en
dc.subject	SI(111)	en
dc.subject	SIMULATIONS	en
dc.subject	BORON	en
dc.subject	Physics	en
dc.title	Dynamics of Subsurface and Surface Chemisorption for B, C, and N on Gaas and Inp	en
dc.type	Article	en
local.department	Physics and Astronomy	en