Now showing items 1-11 of 11

    • Correlation between the extraordinary Hall constant and electrical resistivity minima in Co-rich metallic glasses 

      Majumdar, AK; Khatua, PK; Rathnayaka, KDD; Naugle, Donald G. (American Physical Society, 2004)
      The Hall effect has been studied in some Co-rich ferromagnetic metallic glasses which show resistivity (rho) minima at low temperatures. It is found that the extraordinary Hall constant (R-s) shows a corresponding minimum. ...
    • Hall effect at a tunable metal-insulator transition 

      Teizer, Winfried; Hellman, F.; Dynes, RC. (American Physical Society, 2003)
      Using a rotating magnetic field, the Hall effect in three-dimensional amorphous GdxSi1-x has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient ...
    • Hall-Coefficient and Resistivity of Amorphous Ti1-Xalx Films 

      RATHNAYAKA, KDD; HENNINGS, BD; Naugle, Donald G. (American Physical Society, 1993)
      The resistivity of codeposited amorphous Ti1-xAlx films has been measured from 1.5 to 300 K over the composition range 0.4 less-than-or-equal-to x less-than-or-equal-to 0.92, and the Hall coefficient has been measured at ...
    • Low-temperature magnetization of (Ga,Mn) As semiconductors 

      Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL. (American Physical Society, 2006)
      We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments ...
    • Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As 

      Vyborny, Karel; Kucera, Jan; Sinova, Jairo; Rushforth, A. W.; Gallagher, B. L.; Jungwirth, T. (American Physical Society, 2009)
      Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong ...
    • Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

      Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T. (American Physical Society, 2007)
      A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts ...
    • Semiclassical framework for the calculation of transport anisotropies 

      Vyborny, Karel; Kovalev, Alexey A.; Sinova, Jairo; Jungwirth, T. (American Physical Society, 2009)
      We present a procedure for finding the exact solution to the linear-response Boltzmann equation for two-dimensional anisotropic systems and demonstrate it on examples of noncrystalline anisotropic magnetoresistance in a ...
    • Specific-heat discontinuity in impure two-band superconductors 

      Mishonov, TM; Penev, ES; Indekeu, JO; Pokrovsky, Valery L. (American Physical Society, 2003)
      The Ginzburg-Landau coefficients and the jump of the specific heat are calculated for a disordered two-band superconductor. We start with the analysis of a more general case with arbitrary anisotropy. While the specific-heat ...
    • Spin glass behavior in FeAl2 

      Lue, CS; Oner, Y.; Naugle, Donald G.; Ross, JH. (American Physical Society, 2001)
      Magnetic and transport measurements indicate FeAl2 to be an ordered intermetallic spin glass, with canonical behavior including a susceptibility cusp at T-f = 35 K and frequency-dependent susceptibility below T-f. The ...
    • Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance 

      Kovalev, Alexey A.; Tserkovnyak, Yaroslav; Vyborny, Karel; Sinova, Jairo. (American Physical Society, 2009)
      We present a study of transport in multiple-band noninteracting Fermi metallic systems based on the Keldysh formalism and the self-consistent T-matrix approximation (TMA) taking into account the effects of Berry curvature ...
    • Variation of the density of states in amorphous GdSi at the metal-insulator transition 

      Bokacheva, L.; Teizer, Winfried; Hellman, F.; Dynes, RC. (American Physical Society, 2004)
      We have performed detailed conductivity and tunneling measurements on the amorphous, magnetically doped material alpha-GdxSi1-x, which can be driven through the metal-insulator transition by the application of an external ...