Now showing items 1-2 of 2

    • Asymmetric error correction and flash-memory rewriting using polar codes 

      En Gad, Eyal; Li, Yue; Kliewer, Joerg; Langberg, Michael; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2019-08-13)
      Techniques are disclosed for generating codes for representation of data in memory devices that may avoid the block erasure operation in changing data values. Data values comprising binary digits (bits) can be encoded and ...
    • Joint rewriting and error correction in write-once memories 

      Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2018-04-17)
      Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...