Now showing items 1-6 of 6

    • Asymmetric error correction and flash-memory rewriting using polar codes 

      En Gad, Eyal; Li, Yue; Kliewer, Joerg; Langberg, Michael; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2019-08-13)
      Techniques are disclosed for generating codes for representation of data in memory devices that may avoid the block erasure operation in changing data values. Data values comprising binary digits (bits) can be encoded and ...
    • Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage 

      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2017-05-30)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Joint rewriting and error correction in write-once memories 

      Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2018-04-17)
      Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...
    • NAND flash reliability with rank modulation 

      Li, Yue; En Gad, Eyal; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2018-05-29)
      The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for ...
    • Rank-modulation rewriting codes for flash memories 

      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2015-07-21)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Rank-modulation rewriting codes for flash memories 

      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2018-03-13)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...