Now showing items 1-10 of 10

    • Asymmetric error correction and flash-memory rewriting using polar codes 

      En Gad, Eyal; Li, Yue; Kliewer, Joerg; Langberg, Michael; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2019-08-13)
      Techniques are disclosed for generating codes for representation of data in memory devices that may avoid the block erasure operation in changing data values. Data values comprising binary digits (bits) can be encoded and ...
    • Error correcting codes for rank modulation 

      Jiang, Anxiao; Schwartz, Moshe; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2012-07-17)
      We investigate error-correcting codes for a novel storage technology, which we call the rank-modulation scheme. In this scheme, a set of n cells stores information in the permutation induced by the different levels of the ...
    • Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage 

      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2017-05-30)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Joint rewriting and error correction in write-once memories 

      Jiang, Anxiao; Li, Yue; En Gad, Eyal; Langberg, Michael; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2018-04-17)
      Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory ...
    • NAND flash reliability with rank modulation 

      Li, Yue; En Gad, Eyal; Jiang, Anxiao; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2018-05-29)
      The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for ...
    • Optimal Interleaving on Tori 

      Jiang, Anxiao (Andrew); Cook, Matthew; Bruck, Jehoshua (SIAM Journal on Discrete Mathematics, 2006)
    • Rank modulation for flash memories 

      Jiang, Anxiao; Mateescu, Robert; Schwartz, Moshe; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2012-08-14)
      We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The ...
    • Rank-modulation rewriting codes for flash memories 

      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2015-07-21)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Rank-modulation rewriting codes for flash memories 

      Jiang, Anxiao; En Gad, Eyal; Bruck, Jehoshua; Yaakobi, Eitan (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2018-03-13)
      Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. ...
    • Storing information in a memory 

      Jiang, Anxiao; Bohossian, Vasken Z.; Bruck, Jehoshua (United States. Patent and Trademark OfficeTexas A&M University. Libraries, 2010-02-02)
      Systems and methods, including computer software products, can be used to update or modify data stored in a memory. One or more variables are represented with one or more cell values in a memory. Each variable is associated ...